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| HUR6030, HUR6040 High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode Dimensions TO-247AC A C(TAB) C A=Anode, C=Cathode, TAB=Cathode VRSM V 300 400 VRRM V 300 400 A C Dim. A B C D E F G H J K L M N Millimeter Min. Max. 19.81 20.32 20.80 21.46 15.75 16.26 3.55 3.65 4.32 5.4 1.65 1.0 10.8 4.7 0.4 1.5 5.49 6.2 2.13 4.5 1.4 11.0 5.3 0.8 2.49 Inches Min. Max. 0.780 0.819 0.610 0.140 0.170 0.212 0.065 0.040 0.426 0.185 0.016 0.087 0.800 0.845 0.640 0.144 0.216 0.244 0.084 0.177 0.055 0.433 0.209 0.031 0.102 HUR6030 HUR6040 Symbol IFRMS IFAVM IFSM EAS IAR TVJ TVJM Tstg Ptot Md Weight TC=25oC mounting torque typical Test Conditions TC=110oC; rectangular, d=0.5 TVJ=45oC; tp=10ms (50Hz), sine TVJ=25 C; non-repetitive; IAS=3.5A; L=180uH VA=1.5.VR typ.; f=10kHz; repetitive o Maximum Ratings 70 60 700 1.6 0.4 -55...+175 175 -55...+150 230 0.8...1.2 6 Unit A A mJ A o C W Nm g HUR6030, HUR6040 High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode Symbol TVJ=25oC; VR=VRRM TVJ=150oC; VR=VRRM IF=60A; TVJ=150oC TVJ=25oC Test Conditions Characteristic Values typ. max. 650 2.5 1.25 1.71 0.65 0.25 Unit uA mA V K/W ns IR VF RthJC RthCH trr IRM IF=1A; -di/dt=300A/us; VR=30V; TVJ=25oC VR=100V; IF=130A; -diF/dt=100A/us; TVJ=100 C o 30 4.8 A FEATURES * International standard package * Planar passivated chips * Very short recovery time * Extremely low switching losses * Low IRM-values * Soft recovery behaviour APPLICATIONS * Antiparallel diode for high frequency switching devices * Antisaturation diode * Snubber diode * Free wheeling diode in converters and motor control circuits * Rectifiers in switch mode power supplies (SMPS) * Inductive heating * Uninterruptible power supplies (UPS) * Ultrasonic cleaners and welders ADVANTAGES * Avalanche voltage rated for reliable operation * Soft reverse recovery for low EMI/RFI * Low IRM reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch HUR6030, HUR6040 High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode 160 A IF 120 TVJ=150C TVJ=100C 80 TVJ= 25C 400 Qr 800 TVJ = 100C nC 600 IF = 120A IF = 60A IF = 30A VR = 150V IRM 15 25 A 20 IF = 120A IF = 60A IF = 30A TVJ = 100C VR = 150V 10 40 200 5 0 0.0 0.5 1.0 1.5 V VF 2.0 0 100 0 A/us 1000 -diF/dt 0 200 400 600 A/us 1000 800 -diF/dt Fig. 1 Forward current IF versus VF Fig. 2 Reverse recovery charge Qr versus -diF/dt 90 ns Fig. 3 Peak reverse current IRM versus -diF/dt 14 V 12 VFR 10 tfr VFR TVJ = 100C IF = 60A 0.85 us 0.80 tfr 0.75 1.4 TVJ = 100C VR = 150V 1.2 Kf 1.0 IRM trr 80 70 Qr 60 0.8 IF = 120A IF = 60A IF = 30A 8 0.70 0.6 6 0.65 0.4 0 40 80 120 C 160 TVJ 50 0 200 400 600 -diF/dt 800 A/us 1000 4 0 200 400 0.60 600 A/us 1000 800 diF/dt Fig. 4 Dynamic parameters Qr, IRM versus TVJ 1 K/W 0.1 ZthJC 0.01 Fig. 5 Recovery time trr versus -diF/dt Fig. 6 Peak forward voltage VFR and tfr versus diF/dt Constants for ZthJC calculation: i 1 2 3 Rthi (K/W) 0.324 0.125 0.201 ti (s) 0.005 0.0003 0.038 0.001 0.0001 0.00001 0.0001 0.001 0.01 0.1 t s 1 Fig. 7 Transient thermal resistance junction to case |
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